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A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS

Submitted by navid on Thu, 12/19/2019 - 23:18

TitleA 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS
Publication TypeConference Paper
Year of Publication2013
AuthorsAgah, Amir, Jayamon Jefy, Asbeck Peter, Buckwalter James, and Larson Lawrence
Conference Name2013 IEEE MTT-S International Microwave Symposium Digest (MTT)
PublisherIEEE
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