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A W-band stacked FET power amplifier with 17 dBm P sat in 45-nm SOI MOS

Submitted by navid on Thu, 12/19/2019 - 23:18

TitleA W-band stacked FET power amplifier with 17 dBm P sat in 45-nm SOI MOS
Publication TypeConference Paper
Year of Publication2013
AuthorsJayamon, Jefy, Agah Amir, Hanafi Bassel, Dabag Hayg, Buckwalter James, and Asbeck Peter
Conference Name2013 IEEE Radio and Wireless Symposium
PublisherIEEE
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