Mon, 02/04/2019

Congratulations to Andrea Arias, who will be presenting a paper at the 2019 International microwave Symposium (IMS) entitled “185mW InP HBT Power Amplifier with 1 Octave Bandwidth (25-50GHz), 38% peak PAE at 44 GHz and Chip Area of 276 x 672 µm^2​”.

Congratulations also to Cameron Hill, who will be presenting a paper entitled “A 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI”. 

Also, congratulations to Navid Hosseinzadeh on the paper entitled “A 1 to 20 GHz Silicon-Germanium Low-Noise Distributed Driver for RF Silicon Photonic Mach-Zehnder Modulators”. 

More information about these papers will be available online on IEEE Xplore after the conference. The IMS2019 will be held 2 – 7 June 2019 in Boston, Massachusetts.