] A DC-102GHz broadband amplifier in 0.12 μm SiGe BiCMOS,
, 2009 IEEE Radio Frequency Integrated Circuits Symposium, p.53–56, (2009)
Bandwidth enhancement with low group-delay variation for a 40-Gb/s transimpedance amplifier,
, IEEE Transactions on Circuits and Systems I: Regular Papers, Volume 57, Number 8, p.1964–1972, (2010)
A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$$\backslash$mu $ m SiGe BiCMOS Technology,
, IEEE Journal of Solid-State Circuits, Volume 47, Number 2, p.368–380, (2011)
A fully integrated Q-band bidirectional transceiver in 0.12-μm SiGe BiCMOS technology,
, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), p.57–60, (2010)
A 40-Gb/s optical transceiver front-end in 45 nm SOI CMOS,
, IEEE Journal of Solid-State Circuits, Volume 47, Number 3, p.615–626, (2012)
Staggered gain for 100+ GHz broadband amplifiers,
, IEEE Journal of Solid-State Circuits, Volume 46, Number 5, p.1123–1136, (2011)
A 77-GHz to 90-GHz bidirectional amplifier for half-duplex front-ends,
, IEEE Custom Integrated Circuits Conference 2010, p.1–4, (2010)
A 92 GHz bandwidth distributed amplifier in a 45 nm SOI CMOS technology,
, IEEE Microwave and Wireless Components Letters, Volume 21, Number 6, p.329–331, (2011)
$ Q $-band and $ W $-band power amplifiers in 45-nm CMOS SOI,
, IEEE Transactions on Microwave Theory and Techniques, Volume 60, Number 6, p.1870–1877, (2012)
A 1.1 THz Gain-Bandwidth $ W $-Band Amplifier in a 0.12$$\backslash$mu ${$$\backslash$rm m$}$ $ Silicon Germanium BiCMOS Process,
, IEEE Microwave and Wireless Components Letters, Volume 20, Number 11, p.625–627, (2010)
A 40-Gb/s optical transceiver front-end in 45nm SOI CMOS technology,
, IEEE Custom Integrated Circuits Conference 2010, p.1–4, (2010)