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2
A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS, Ning, Kang, and Buckwalter James F. , 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), p.85–88, (2018)
6
A 60-GHz Symmetric Doherty Power Amplifier with 20.4% 6-dB Back-off Efficiency, Tanio, Masaaki, Ning Kang, and Buckwalter James F. , 2019 49th European Microwave Conference (EuMC), p.559–562, (2019)