TitleA 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI
Publication TypeConference Paper
Year of Publication2019
AuthorsHill, C., Hamza A., AlShammary H., and Buckwalter J. F.
Conference Name2019 IEEE MTT-S International Microwave Symposium (IMS)
Date PublishedJune
KeywordsBandwidth, CMOS integrated circuits, CMOS SOI, Couplers, frequency 1.0 GHz, frequency 500.0 MHz, High Power, high-power modulator, Insertion loss, integrated circuit design, integrated circuit testing, microwave power amplifiers, microwave switches, modulators, phase modulation, Phase-shifter, power amplifier, power handling, RF Switch, silicon-on-insulator, SOI CMOS, Switches, Switching circuits, UHF power amplifiers