A 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI,
, 2019 IEEE MTT-S International Microwave Symposium (IMS), June, p.243-246, (2019)
185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 ?m2,
, 2019 IEEE MTT-S International Microwave Symposium (IMS), June, p.1303-1305, (2019)