| Title | 185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 ?m2 |
| Publication Type | Conference Paper |
| Year of Publication | 2019 |
| Authors | Arias, A., Rowell P., Urteaga M., Griffith Z., Shinohara K., Bergman J., Carter A., Pierson R., Brar B., Buckwalter J., and Rodwell M. |
| Conference Name | 2019 IEEE MTT-S International Microwave Symposium (IMS) |
| Date Published | June |
| Keywords | 250nm InP HBT, 5G, Bandwidth, bipolar MMIC, broadband PA, frequency 25.0 GHz to 50.0 GHz, frequency 2550.0 GHz, frequency 44.0 GHz, HBT devices, HBT MMIC, HBT power amplifier, Heterojunction bipolar transistors, high efficiency mm-Wave PA, III-V semiconductor materials, III-V semiconductors, Impedance, indium compounds, Indium phosphide, InP, millimetre wave power amplifiers, MIMO, MIMO communication front-ends, MMIC power amplifiers, power 185.0 mW, power amplifiers, radar applications, size 250.0 nm, SSPA, Transmission line measurements, voltage 2.5 V to 2.8 V |
| DOI | 10.1109/MWSYM.2019.8701079 |
