Found 2 results
Author Title Type [ Year(Asc)]
Filters: Author is H. AlShammary and Keyword is SOI CMOS  [Clear All Filters]
2019
A 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI, Hill, C., Hamza A., AlShammary H., and Buckwalter J. F. , 2019 IEEE MTT-S International Microwave Symposium (IMS), June, p.243-246, (2019)
A Code-Domain RF Signal Processing Front-end for Simultaneous Transmit and Receive with 49.5 dB Self-Interference Rejection, 12.1 dBm Receive Compression, and 34.3 dBm Transmit Compression, AlShammary, H., Hill C. W., Hamza A., and Buckwalter J. F. , 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June, p.143-146, (2019)