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Author Title Type [ Year(Desc)]
Filters: Author is K. Shinohara and Keyword is III-V semiconductor materials  [Clear All Filters]
2019
185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 ?m2, Arias, A., Rowell P., Urteaga M., Griffith Z., Shinohara K., Bergman J., Carter A., Pierson R., Brar B., Buckwalter J., et al. , 2019 IEEE MTT-S International Microwave Symposium (IMS), June, p.1303-1305, (2019)