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Conference Paper
A W-band stacked FET power amplifier with 17 dBm P sat in 45-nm SOI MOS, Jayamon, Jefy, Agah Amir, Hanafi Bassel, Dabag Hayg, Buckwalter James, and Asbeck Peter , 2013 IEEE Radio and Wireless Symposium, p.256–258, (2013)