Found 6 results
Author [ Title(Desc)] Type Year
Filters: Author is Larson, Lawrence  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
1
A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS, Agah, Amir, Jayamon Jefy, Asbeck Peter, Buckwalter James, and Larson Lawrence , 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), p.1–3, (2013)
3
A 34% PAE, 18.6 dBm 42–45GHz stacked power amplifier in 45nm SOI CMOS, Agah, Amir, Dabag Hayg, Hanafi Bassel, Asbeck Peter, Larson Lawrence, and Buckwalter James , 2012 IEEE Radio Frequency Integrated Circuits Symposium, p.57–60, (2012)
4
A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm P sat and 16% PAE in 45-nm SOI CMOS, Agah, Amir, Wang Wei, Asbeck Peter, Larson Lawrence, and Buckwalter James , 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), p.249–252, (2013)
A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS, Agah, Amir, Hanafi Bassel, Dabag Hayg, Asbeck Peter, Larson Lawrence, and Buckwalter James , 2012 IEEE/MTT-S International Microwave Symposium Digest, p.1–3, (2012)
C
CMOS handset power amplifiers: Directions for the future, Asbeck, Peter, Larson Lawrence, Kimball Donald, and Buckwalter James , Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, p.1–6, (2012)
H
High Efficiency mm-Wave Transmitter Array, Asbeck, Peter, Rebeiz Gabriel, Buckwalter James, Larson Lawrence, and Voinigescu Sorin , (2016)