Found 7 results
Author Title Type [ Year(Asc)]
Filters: Author is Ning, Kang  [Clear All Filters]
2019
A 0.5-20 GHz RF silicon photonic receiver with 120 dB. Hz2/3 SFDR using broadband distributed IM3 injection linearization, Hosseinzadeh, Navid, Jain Aditya, Ning Kang, Helkey Roger, and Buckwalter J , Proc. IEEE Radio Frequency Integr. Circuits Symp, (2019)
A 1 to 20 GHz silicon-germanium low-noise distributed driver for RF silicon photonic Mach–Zehnder modulators, Hosseinzadeh, Navid, Jain Aditya, Ning Kang, Helkey Roger, and Buckwalter J , Proc. IEEE/MTT-S Int. Microw. Symp., (2019)
A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation, Ning, Kang, Fang Yihao, Hosseinzadeh Navid, and Buckwalter James F. , IEEE Journal of Solid-State Circuits, (2019)
A 60-GHz Symmetric Doherty Power Amplifier with 20.4% 6-dB Back-off Efficiency, Tanio, Masaaki, Ning Kang, and Buckwalter James F. , 2019 49th European Microwave Conference (EuMC), p.559–562, (2019)
A Linear Microwave Electro-Optic Front End With SiGe Distributed Amplifiers and Segmented Silicon Photonic Mach-Zehnder Modulator, Hosseinzadeh, Navid, Jain Aditya, Ning Kang, Helkey Roger, and Buckwalter James F. , IEEE Transactions on Microwave Theory and Techniques, (2019)
2018
An 18-dBm, 57 to 85-GHz, 4-stack FET Power Amplifier in 45-nm SOI CMOS, Ning, Kang, and Buckwalter James F. , 2018 IEEE/MTT-S International Microwave Symposium-IMS, p.1453–1456, (2018)
A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS, Ning, Kang, and Buckwalter James F. , 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), p.85–88, (2018)