Found 9 results
Author [ Title(Desc)] Type Year
Filters: Author is Agah, Amir  [Clear All Filters]
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1
A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS, Agah, Amir, Jayamon Jefy, Asbeck Peter, Buckwalter James, and Larson Lawrence , 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), p.1–3, (2013)
3
A 34% PAE, 18.6 dBm 42–45GHz stacked power amplifier in 45nm SOI CMOS, Agah, Amir, Dabag Hayg, Hanafi Bassel, Asbeck Peter, Larson Lawrence, and Buckwalter James , 2012 IEEE Radio Frequency Integrated Circuits Symposium, p.57–60, (2012)
4
A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm P sat and 16% PAE in 45-nm SOI CMOS, Agah, Amir, Wang Wei, Asbeck Peter, Larson Lawrence, and Buckwalter James , 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), p.249–252, (2013)
A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS, Agah, Amir, Hanafi Bassel, Dabag Hayg, Asbeck Peter, Larson Lawrence, and Buckwalter James , 2012 IEEE/MTT-S International Microwave Symposium Digest, p.1–3, (2012)
A
Active millimeter-wave phase-shift Doherty power amplifier in 45-nm SOI CMOS, Agah, Amir, Dabag Hayg-Taniel, Hanafi Bassel, Asbeck Peter M., Buckwalter James F., and Larson Lawrence E. , IEEE Journal of Solid-State Circuits, Volume 48, Number 10, p.2338–2350, (2013)
Analysis and design of stacked-FET millimeter-wave power amplifiers, Dabag, Hayg-Taniel, Hanafi Bassel, Golcuk Fatih, Agah Amir, Buckwalter James F., and Asbeck Peter M. , IEEE Transactions on Microwave Theory and Techniques, Volume 61, Number 4, p.1543–1556, (2013)
M
Multi-drive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS, Agah, Amir, Jayamon Jefy Alex, Asbeck Peter M., Larson Lawrence E., and Buckwalter James F. , IEEE Journal of Solid-State Circuits, Volume 49, Number 5, p.1148–1157, (2014)
S
Spatially power-combined W-band power amplifier using stacked CMOS, Jayamon, Jefy, Gurbuz Ozan, Hanafi Bassel, Agah Amir, Buckwalter James, Rebeiz Gabriel, and Asbeck Peter , 2014 IEEE Radio Frequency Integrated Circuits Symposium, p.151–154, (2014)
W
A W-band stacked FET power amplifier with 17 dBm P sat in 45-nm SOI MOS, Jayamon, Jefy, Agah Amir, Hanafi Bassel, Dabag Hayg, Buckwalter James, and Asbeck Peter , 2013 IEEE Radio and Wireless Symposium, p.256–258, (2013)