Found 5 results
Author [ Title(Desc)] Type Year
Filters: Author is Jayamon, Jefy  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
1
A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS, Agah, Amir, Jayamon Jefy, Asbeck Peter, Buckwalter James, and Larson Lawrence , 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), p.1–3, (2013)
F
Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45nm SOI CMOS, Liu, Gang, Jayamon Jefy, Buckwalter James, and Asbeck Peter , 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), p.271–274, (2015)
S
Series power combining: Enabling techniques for Si/SiGe millimeter-wave power amplifiers, Buckwalter, James F., Daneshgar Saeid, Jayamon Jefy, and Asbeck Peter , 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), p.116–119, (2016)
Spatially power-combined W-band power amplifier using stacked CMOS, Jayamon, Jefy, Gurbuz Ozan, Hanafi Bassel, Agah Amir, Buckwalter James, Rebeiz Gabriel, and Asbeck Peter , 2014 IEEE Radio Frequency Integrated Circuits Symposium, p.151–154, (2014)
W
A W-band stacked FET power amplifier with 17 dBm P sat in 45-nm SOI MOS, Jayamon, Jefy, Agah Amir, Hanafi Bassel, Dabag Hayg, Buckwalter James, and Asbeck Peter , 2013 IEEE Radio and Wireless Symposium, p.256–258, (2013)